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UPSI Digital Repository (UDRep)
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| Abstract : Universiti Pendidikan Sultan Idris |
| A growing communications technology along with modern technology, from time to time. Developments in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in the development of the current transformation. Long Term Evolution (LTE) is a type of wireless communication that available for transmitting the large amounts of data, voice and video over long distance using a different frequency band. Low Noise Amplifier is located at the first block of the receiver system, which makes it one of the important parts to transmit the signal. This project is to design a Low Noise Amplifier for LTE Application that will work at 6 GHz using high-performance low noise Pseudomorphic High Electron Mobility Transistor (PHEMT) ATF36163 manufactured by Avago Technologies. The overall goal of this research is to study, design and analyze the Low Noise Amplifier at 6 GHz in communication aspects of low noise amplifier must be less than 3 dB and the gain more than 15 dB is based mainly upon the s-parameter of a transistor |
| References |
[1] Alpana Adsul et al.(2011).Design of Low Noise Amplifier for UWB Radio Receiver, International Journal of Engineering Science and Technology, Vol. 3 No. 10. [2] Abu Bakar, Ahmad Zamzuri, (2016). Design of Microwave LNA Based on Ladder Matching Network for WiMAX Application.. International Journal of Electrical and Computer Engineering (IJECE).Vol.6,No.4. [3] David M. Pozar,(2005).Microwave Amplifier Design, 3rd edition, Microwave Engineering [4] Yi-Jan Emery Chen, Senior Member, IEEE and Yao_I. Huang (2007). Development of Integrated Broad-Band CMOS Low-Noise Amplifiers.Hossein Sahoolizadeh, [5] Alishir Moradi Kordalivand and Zargham Heidari (2009). Design and Simulation of Low Noise Amplifier Circuit for 5 GHz to 6 GHz, World Academy of Science, Engineering and Technoloby 51. [6] Mohd Zainol Abidin Abd Aziz (2004), “Low Noise Amplifier Circuit Design for 5 GHz to 6 GHz” Proceeding of the 2004 IEEE – 0-7803=8671-X/04/- RF and Microwave conference, October 5-6 Subang, Selangor Malaysia [7] Nejati, H.; Ragheb, T.; Nieuwoudt, A.; Massoud, Y. (2007).Modeling and Design of Ultra wideband Low Noise Amplifiers with Generalized Inpedance Matching Networks, ISCAS 2007.IEEE, p.2622-2625. [8] Abu Bakar, Ashardi, (2017). A microwave Low Noise Amplifier for Long Term Evolution (LTE) Application. Journal of Engineering and Science Research.Vol.1, No 2, pp 203-208 [9] Tienyu Chang, Jianghong Chen, Lawrence Rigge and Jenshan Lin, (2008).ESD-Protected Wideband CMOS LNAs Using Modified Resistive Feedback Techniques with Chip-on-Board Packaging.Members of IEEE. [10] T.H. Lee, (2004).The Design of CMOS RadioFrequency Integrated Circuits, 2nd Edition, Cambridge Press. [11] Xuezhen Wang, Robert Weber.Design of a CMOS Low Noise Amplifier (LNA) at 5.8 GHz and its Sensitivity Analysis.Analog and Mixed Signal VLSI Design Center Dept. of Electrical and Computer Engineering, Iowa State University, U.S.A. [12] Ro, M., W., Liu, C. Y., Lin P. C. (2010). A low Power Full-Band Low-Noise Amplifier for UltraWideband Receiver. IEEE Transactions on Microwave Theory and Techniques, Vol 58, pp 2077-2083. [13] Park, J., Kim, S, N., Roh, Y. S., & Yoo, C. (2010). A Direct Conversion CMOS RF Receiver Reconfigurable from 2 to 6 GHz. IEEE Transactions on Microwave Theory and Techniques, Vol. 58, pp2326-2333 [14] Jaeyi Choi, Shin-Hyouk Seo, Hyunwou Moon, and llku Nam (2011). A low Noise and Low Power RF Front-end for 5.8 GHz DSRC Receiver in 0.13 µm CMOS. Journal of Semiconductor Technology and Science, Vol.11, No.1,pp 59-64. [15] J.Bahl, and Inder (2009.Fundamentals of RF and Microwave Transistor Amplifiers.A John Wiley & Sons. [16] Jin-Fa Chang, Yo-Sheng Lin, Jen-How Lee, and Chien-Chin Wang (2012). A low-Power 3.2- 9.7 GHz Ultra-Wideband Low Noise Amplifier with Excellent Stop-band Rejection Using 0.18 µm CMOS Technology. IEEE Proceedings. [17] Baohong Liu, and Junfa Mao (2012). Design of a 0.5 V CMOS Cascode Low Noise Amplifier for Multi-Gigahertz Applications. Journal of Semiconductor Vol. 33, No.1
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